سال انتشار: ۱۳۸۷

محل انتشار: دومین کنگره بین المللی علوم و فناوری نانو

تعداد صفحات: ۲

نویسنده(ها):

S.R Aghdaee – Department of Physics, Iran University of Science and Technology, Narmak, 16844 Teheran
v soleimanian –

چکیده:

X-ray line profile analysis has been carried out to characterize the microstructure of polycrystalline cerium oxide. In order to determine the average coherent scattering domain size and dislocation density two techniques, namely modified Williamson-Hall and modified Warren-Averbach were employed. Modified Williamson-Hall plot provides the volume-weighted domain size <DV>=21.3(2) nm. Modified Warren-Averbach gives the area- weighted domain size <DA>=18.8(1) nm, the average dislocation density (assuming 50% edge and 50% screw dislocation) ρ=۳٫۳(۷)×۱۰۱۶m-2 and effective cut-off radius of dislocation, Re=23.1(4) nm