سال انتشار: ۱۳۹۰

محل انتشار: پنجمین کنفرانس بین المللی پیشرفتهای علوم و تکنولوژی

تعداد صفحات: ۸

نویسنده(ها):

Ali Naderi –
Parviz Keshavarzi –
Ali Asghar Orouji –

چکیده:

In this paper a novel Single Kappa Halo Carbon Nanotube Field Effect Transistor (SKH-CNTFET) is presented and investigated theoretically. In SKH-CNTFET, compare with Conventional Carbon Nanotube Field Effect Transistor (C-CNTFET) structure, a small region of gate insulator at source side is replaced by an oxide with higher dielectric constant which is called kappa halo. By applying kappa halo, a perceivable step in the surface potential profile is observed which suppresses the short channel effects. Simulation results show that the proposed structure has lower short channel effects and higher on/off current ratio compare with C-CNTFET while the saturation current is not reduced. The simulations are based on the self-consistent solution of the two-dimensional Poisson–Schrodinger equation within the non-equilibrium Green’s function (NEGF) formalism