سال انتشار: ۱۳۸۷

محل انتشار: دومین کنگره بین المللی علوم و فناوری نانو

تعداد صفحات: ۲

نویسنده(ها):

T Vazifehshenas – Department of Physics, Shahid Beheshti University, Evin, 1983963113, Tehran, Iran
F Khodaverdloo –

چکیده:

Recent advances in nanoscale semiconductor technology have made it possible to fabricate high-quality double-layer two-dimensional electron systems with the electrons confined to two parallel planes separated by a distance comparable to that between electrons within a plane. The Coulomb interaction between electrons in adjacent nanolayers plays a dominant role in determining the behavior of the system. In particular, the energy-transfer between two layers occurs when they are kept at two different carrier temperatures. This phenomenon has been investigated theoretically and experimentally in spatially separated systems [1-3]. Based on the balance-equation formalism and random phase approximation (RPA), the energy-transfer rate has been obtained in double-layer systems [3]. However, the RPA neglects the many-body short-range screening which is important at low electron density systems.In this paper, we go beyond the RPA by including some short-range local field corrections in the Hubbard approximation to calculate the energy-transfer rate in linear regime for n-type GaAs-based double quantum layer systems. We use both static and dynamic temperature dependent screening approximations into the dielectric function of the system. The results are compared with those obtained from the RPA calculations