سال انتشار: ۱۳۸۲

محل انتشار: یازدهمین کنفرانس مهندسی برق

تعداد صفحات: ۸

نویسنده(ها):

M. H. Sheikhi – Dept. of Elect. Eng. , School of Eng., Shiraz Univ., Shiraz, Iran
Vahid Ahmadi – Dept. of Elect. Eng. , Tar biat Modares Univ., Tehran, Iran
M. K. Moravvej-Farshi – Dept. of Elect. Eng. , Tar biat Modares Univ., Tehran, Iran

چکیده:

A physical model for the characteristics of a quantum well structure optoelectronic integrated device (QW-OEID) is outlined. The device is made from a vertical integration of quantum well structure heterojunction phototransistor (HPT) over a QW laser diode. Based on the model, static and dynamic characteristics of the device is analyzed numerically. The model derives two different modes of operations for the device: amplification mode for small optical feedback, and switching mode for high feedback.