سال انتشار: ۱۳۹۱

محل انتشار: بیستمین کنفرانس مهندسی برق ایران

تعداد صفحات: ۴

نویسنده(ها):

Bita Davoodi – Department of Electrical Engineering, Qazvin Islamic Azad University
Rahim Faez – Department of Electrical Engineering, Sharif University of Technology
Saeed Haji Nasiri – Department of Electrical Engineering, Qazvin Islamic Azad University
Maryam Farrokhi –

چکیده:

Nichols stability analysis based on transmission line modeling (TLM) for single wall carbon nanotube (SWCNT) interconnects used in 3D-VLSI circuits is investigated for thefirst time. In this analysis, the dependence of the degree of relative stability for SWCNT interconnects on the geometry ofeach tube has been acquired. It is shown that, increasing the length and diameter of each tube, SWCNT interconnects become more stable