سال انتشار: ۱۳۹۳

محل انتشار: پنجمین کنگره بین المللی نانو و فناوری نانو (ICNN2014)

تعداد صفحات: ۴

نویسنده(ها):

M Zaimbashi – Department of Electrical Engineering, Sharif University of Technology, Azadi Avenue, Tehran, Iran
N Yasrebi – Department of Electrical Engineering, Sharif University of Technology, Azadi Avenue, Tehran, Iran
H Monjezi – Department of Electrical Engineering, Sharif University of Technology, Azadi Avenue, Tehran, Iran
P Yazdanfar – Department of Electrical Engineering, Sharif University of Technology, Azadi Avenue, Tehran, Iran

چکیده:

Carbon nanotubes (CNTs) aregrownby Plasma enhanced chemical vapor deposition (PECVD) withH2/C2H4 feedstock at a very low temperature of 400 °C. A standard RF sputtering system is used to deposit Ti and Nion a Si substrate as barrier and catalyst layers, respectively. The deposition of the Ti and Ni is done at the RF power of180W and substrate temperature of 130 °C. Nickel Nano-islands are formed by H2-Plasma pre-treatment at 500 °C. Itis shown that nickel thickness can affect Nano-island density, and subsequently carbon nanotubes quality. The qualityof carbon nanotubes are improved by decreasing thickness of the nickel layer.