سال انتشار: ۱۳۹۱

محل انتشار: بیستمین کنفرانس مهندسی برق ایران

تعداد صفحات: ۴

نویسنده(ها):

M. J. Mohammadzamani – Department of Electrical and Computer Engineering, University of Tehran
S. M Tabatabaei –
M Fathipour –

چکیده:

Leakage current reduction has been in the forefront of research for improving domino circuits. By increasing the gate oxide thickness in a previously introduced dual threshold sourcefollowing evaluation AND gate, an improvement in the leakage characteristics is observed. Also by restructuring the dualthreshold SEFG AND gate as an OR gate, the leakage characteristic is enhanced. Remarkably, these modifications have not degraded the delay characteristics. These is due to the factthat the thick oxide transistors are not utilized in the critical paths of the logic circuit and are carefully calibrated –using hspice and BSIM4 45nm models [1]-to only affect leakage