سال انتشار: ۱۳۹۱

محل انتشار: بیستمین کنفرانس مهندسی برق ایران

تعداد صفحات: ۳

نویسنده(ها):

M Asad – Nanotechnology Research Center, Shiraz University
M Ghorbanzadeh – University of Tehran, Electrical Department, Device and Simulation Lab, MEMS and NEMS Lab
Gh Sareminia –
M Fathipour –

چکیده:

Junction depth plays an important role in determining reverse saturation current (Is) and the quantum efficiency η of a detector. In order to reduce the Is and increase the η, thethickness of p-type region is made as thin as possible. To evaluate the effect of junction depth on quantum efficiency andreverse saturation current we calculated the efficiency and fabricate InSb PV detector, and the effect of junction depth on performance of this type of detector acquired