سال انتشار: ۱۳۹۰

محل انتشار: نوزدهمین کنفرانس مهندسی برق ایران

تعداد صفحات: ۴

نویسنده(ها):

M. Razavi – Electrical Engineering Department, Semnan University, Semnan, Iran
Ali A. Orouji – Electrical Engineering Department, Semnan University, Semnan, Iran
Seyed Ebrahim Hosseini – Electrical Engineering Department, Sabzevar Tarbiat Moallem University, Sabzevar, Iran

چکیده:

This paper compares the Double Recessed Gate (DRG) Silicon carbide (SiC) based metal semiconductor field effect transistors (MESFETs) with different double recessed gate lengths (Ldrg). We investigate the device performance focusing on breakdown voltage, DC trans-conductance, threshold voltage, short channel effect, drain current, DC output conductance, and gate capacitance with twodimensional and two-carrier device simulations. Our simulation results demonstrate that with increasing the Ldrg in the DRG structure, the saturated drain current, short channel effects and the DC output conductance are reduced and the threshold voltage has positive shift. Increasing the Ldrg in the drain side reduces the gate capacitance and increases the breakdown voltage. Also, increasing the Ldrg in the source side increases the DC trans-conductance