سال انتشار: ۱۳۸۷

محل انتشار: دومین کنگره بین المللی علوم و فناوری نانو

تعداد صفحات: ۳

نویسنده(ها):

A Khademi – Department of Physics, Sharif University of Technology, P. O. Box11155-9161, Tehran, Iran
R Azimirad – Department of Physics, Sharif University of Technology, P. O. Box11155-9161, Tehran, Iran
K Hamze – Academic Center for Education, Culture & Research (ACECR)- Sharif University Branch- High Vacuum
A.Z Moshfegh – Department of Physics, Sharif University of Technology, P. O. Box11155-9161, Tehran, Iran

چکیده:

Field emission (FE) have been considered for several vacuum microelectronic applications such as field emission displays, microwave sources, FE triodes and amplifiers [1]. Field emitters based on various one-dimensional nanomaterials such as carbon nanotubes [2], ZnO nanowires [3], tungsten oxide nanowires [4], molybdenum oxide nanowires [5], etc., have been intensively investigated in the last few years. Among these materials, tungsten oxide 1D nanostructures have attracted more attention due to their high aspect ratio, low turn-on field, and highly stable emission. Tungsten oxide is an n-type semiconductor with a work function in the range of 5.59–۵٫۷ eV which makes it attractive for the stated applications. [4] In this paper, we describe a rather simple approach to grow tungsten oxide nanowires on a W wire followed by investigation the field-emission characteristics of the synthesized nanowires