سال انتشار: ۱۳۸۷

محل انتشار: دومین کنگره بین المللی علوم و فناوری نانو

تعداد صفحات: ۲

نویسنده(ها):

D Farmanzadeh – Faculty of chemistry, University of Mazandaran, Babolsar, P. O. Box: 453, I. R. Iran
S Ghazanfary –

چکیده:

The existence of boron nitride nanotubes, BNNTs was predicted theoretically in 1994 and synthesized experimentally in 1995. Different from the carbon nanotubes, CNTS analogues, BNNTs are wide band gap semiconductors that can be suited for high power and high temperature applications.Recently, extensive efforts have been focused on the investigation of boron nitride nanotubes, BNNTs that can be used as nanodevices in nano scale systems. BNNTs are interesting in their properties and way offer different possibilities for technological applications that CNTs cannot provide. The uniformity of electronic properties and relative chemical inertness of BNNTs are key advantages for their application in nanoelectronic so far BNNTs can be used as the active component of molecular electronic devices [1-3].In this research we have investigated the electronic and structural properties of various lengths of BNNT (4,0) in the presence of an applied longitudinal electric field