سال انتشار: ۱۳۹۰

محل انتشار: نوزدهمین کنفرانس مهندسی برق ایران

تعداد صفحات: ۴

نویسنده(ها):

M. Hosseinifar – Dept. of Elec. Eng., Science & Research Branch, Islamic Azad University, Tehran, Iran
V. Ahmadi – Dept. of Elec. Eng., Tarbiat Modares University, Tehran, Iran
Gh Abaeiani – Semiconductor Dept. Laser and Optics Research School, Tehran, Iran

چکیده:

This paper presents a new structure for uni-traveling carrier photodiodes (UTC-PDs), namely Microring-based UTC-PDs (MR-UTC-PDs). Photoresponse characteristics of MR-UTC-PDs, which depend on device parameters and coupling conditions, are investigated. Bandwidth of MR-UTC-PD agrees well with the theoretical analysis of narrow-band PDs model. In this report, the effects of MR-UTC-PD photoabsorption layer, on quantum efficiency and bandwidth are analyzed. It is also shown that, this PD can provide bandwidth-efficiency product in the order of several hundreds gigahertz, even in low photoabsorption layers.