سال انتشار: ۱۳۹۱

محل انتشار: بیستمین کنفرانس مهندسی برق ایران

تعداد صفحات: ۳

نویسنده(ها):

Saeed Haji Nasiri – Department of Electrical Engineering, Qazvin, Islamic Azad University, Qazvin 3419915195, Iran
Mohammad Kazem Moravvej-Farshi – Department of Electrical and Computer Engineering, Tarbiat Modares University (TMU), Tehran
Rahim Faez – Electrical Engineering Department, Sharif University of Technology, Tehran
Aghil Bajelan – Department of Electrical Engineering, Science and Research Branch, Islamic Azad University

چکیده:

Using tight binding theory the effect of topological ripples on the electronic band structure, density of states (DOS), and Fermi velocity of graphene are studied. The resultsshow that by an increase in the ripple height the graphene Fermi velocity decreases and its DOS increases.- Moreover, we show that an increase in the ripple period causes the graphene band gap and DOS to decrease and its Fermi velocity to increase.