سال انتشار: ۱۳۹۳

محل انتشار: پنجمین کنگره بین المللی نانو و فناوری نانو (ICNN2014)

تعداد صفحات: ۳

نویسنده(ها):

M Massah Bidgoli – Department of Chemistry, University of Kashan, Kashan, Iran
M Mohsen-Nia – Department of Chemistry, University of Kashan, Kashan, Iran- bInstitute of Nanoscience and Nanotechnology, University of Kashan, Kashan, Iran
F Akbari Boroumand – Department of Electrical and ComputerEngineering, K.N. Toosi University of Technology, Tehran, Iran

چکیده:

Polyaniline-5% Fumed silica (PANI-5% SiO2) nanocomposite has been prepared to use as hole-injectionlayer in polymer light emitting diode (PLED) with structure ITO/PANI-5% SiO2/MEH-PPV/Al. The current densityvoltage(J-V) characteristic of the PLED has been investigated. The Fowler-Nordheim tunneling model has been usedto explain the obtained J-V data and the logarithmic plot of the J-V characteristic of the fabricated device showed apower law behavior (J∝ Vk+1) with two distinct regions.