سال انتشار: ۱۳۹۳
محل انتشار: پنجمین کنگره بین المللی نانو و فناوری نانو (ICNN2014)
تعداد صفحات: ۳
M Emami – Department of Physics, Sahid Beheshti University, Tehran, Iran
N Mansour – Department of Physics, Sahid Beheshti University, Tehran, Iran
M Pouramini – Department of chemistry, Sahid Beheshti University, Tehran, Iran
In This paper, we report the results of electrical characterization of gold thin films. Au thin films were deposited by centrifugal technique on glass substrates and cross sectional image display that thickness.The electrical resistance of thin films as a function of film annealing temperature was studied and I-V diagram was exposed. AFM images indicated transformation in morphology of surfaces. Increase in temperature from ambient temperature to about 50° C, we see decrease and afterwards increase in surface resistance.