سال انتشار: ۱۳۹۳

محل انتشار: پنجمین کنگره بین المللی نانو و فناوری نانو (ICNN2014)

تعداد صفحات: ۴

نویسنده(ها):

E Mahichi – Department of Physics, Sari Branch, Islamic Azad University, Sari, Iran
A Ahmadi Fouladi – Department of Physics, Sari Branch, Islamic Azad University, Sari, Iran

چکیده:

Effects of impurity on the electronic transport properties of a T-shaped armchair graphene nanoribbonjunction is numerically investigated. Using a generalized Green’s function method and the Landauer-Büttikerformalism, the impurity conditions are determined by substitution of carbon atoms in the honeycomb graphenenanoribbon lattice by nitrogen and boron atoms. We have found that transport characteristics, including thetransmission function and current-voltage characteristics are strongly influenced by type of impurity as well as itsconcentration. Results show that the existence of impurities can cause a metal-semiconductor transition in thesystem.We think that the results of the present report could be useful for designing the future graphene-based electronicdevices.