سال انتشار: ۱۳۹۰

محل انتشار: چهاردهمین کنفرانس دانشجویی مهندسی برق ایران

تعداد صفحات: ۵

نویسنده(ها):

Elahe Akbarnejad – Azad Islamic University of Iran-Center Tehran Branch, Tehran, Iran
Ebrahim Asl Soleimani – Thin film laboratory, ECE Department, University of Tehran, Tehran, Iran

چکیده:

In order to obtain a suitable ohmic contact with the lowest resistivity, Chromium (Cr) thin films were deposited on transparent conductive oxide indium tin oxide (ITO) by RF sputtering method in argon atmosphere and its electrical properties were optimized. The deposition of Cr thin film has been performed for the layers with thickness of 150, 300 and 600 nm in constant Ar gas flow of 30sccm. Results show that the lowest contact resistivity belongs to the layer with 600 nm thickness. Furthermore Cr/ITO has been studied for five different Rf power of 100,150,200,250 and 300 W while the deposition with constant thickness of 600 nm Cr, which gave us the lowest contact resistivity. Experimental results show that the best specific contact resistance achieved at Rf power of 150W with amount of 4.7×۱۰-۲ cm2.The prepared samples were characterized using a field emission scanning electron microscope