سال انتشار: ۱۳۹۱

محل انتشار: پانزدهمین کنفرانس دانشجویی مهندسی برق ایران

تعداد صفحات: ۴

نویسنده(ها):

Mahdi Ghasemi – Department of Electrical Engineering, South Tehran Branch, Islamic Azad University, Tehran

چکیده:

In this paper we show the effect of ion implantation on the resistance of the LDMOSFET. In the ion implanted channel (IIC) LDMOSFET the channel region charge ismodified, thus the inversion layer charge is changed. Since the resistance in a MOSFET is determined by the inversion layercharge, the resistance of the channel region may be varied. By employing the IIC structure, the inversion layer charge decreases and thus the resistance increases.