سال انتشار: ۱۳۹۰

محل انتشار: نوزدهمین کنفرانس مهندسی برق ایران

تعداد صفحات: ۴

نویسنده(ها):

N. Seiedhosseinzadeh – Faculty of Electrical and Computer Engineering, Tarbiat Modares University, Tehran, Iran
A Nabavi –
B. H Seyedhosseinzadeh –

چکیده:

A new low power 33 GHz low noise amplifier (LNA) is proposed in a 0.18μm CMOS technology. It is composed of a single-stage cascode topology consisting of two Common-Gate (CG) amplifiers which provides gain requirements in high frequencies with very low power dissipation. The designed LNA achieves a power gain of 12 dB, IIP3 of -1dBm, and noise figure from 2.96-3.86 dB over the 3dB bandwidth from 30-36GHz frequency range. This LNA consumes 7.6 mW from a 1.8-V power supply