سال انتشار: ۱۳۹۱

محل انتشار: بیستمین کنفرانس مهندسی برق ایران

تعداد صفحات: ۴

نویسنده(ها):

Ali Haghshenas – University of Tehran
Morteza Fathipour – University of Tehran

چکیده:

in this paper, the effect of substrate on thermal resistance of AlGaN/GaN HEMT devices is investigated. The results of this investigation show that device self-heating isstrongly affected by the thickness and material type of substrate and the thermal conductivity of materials utilized in device structure. Sapphire, SiC and GaN substrates are usually used inAlGaN/GaN HEMT devices. For AlGaN/GaN HEMT device, we have investigated that how the use of these substrates influence heating characteristics of the device