سال انتشار: ۱۳۸۷

محل انتشار: دومین کنگره بین المللی علوم و فناوری نانو

تعداد صفحات: ۲

نویسنده(ها):

S. Aisyah Shamsudin – School of Applied Physics, Faculty of Science & Technology, University Kebangsaan Malaysia
Morteza Sasani Ghamsari –
Shahidan Radiman –

چکیده:

Low-dimension semiconductor nanomaterials ranging from quantum dots to one-dimensional nanostructures have been attracting intense studies due to their wide-ranging applications in optoelectronics, biotechnology, catalysis and others. Varieties of physical and chemical methods have been developed to synthesize semiconductor nanodots, nanorods, and nanowires. The great interest in synthesize and characterization of 1-D nanostructure because of their peculiar electrical transport properties, field emission properties and potential applications in the nanodevices. Cadmium sulfide (CdS), is a direct band gap materials with Eg of 2.42 eV at room temperature and can be widely used for photoelectronic devices. These nanostructures represent ideal systems for dimension-dependent optical, electrical, and mechanical properties and are expected to play an important role as building blocks in devices and processes, such as light emitting diodes, solar cells, single electron transistors, gas sensor, detectors, nanolasers, and biological labels [1-3]. 1-D CdS nanomaterials have been prepared by various physical and chemical routes [4-6]. It is well known that the prepared cadmium sulphide (CdS) 1-D nanocrystals with different methods have different optical properties. In these procedures various kinds of row materials and different conditions have been applied. Therefore, it is difficult to find which process is better for preparation CdS nanostructure material. In this approach we have tried to compare two different techniques that normally are used for this purpose