سال انتشار: ۱۳۹۰

محل انتشار: اولین همایش ملی نانومواد و نانو تکنولوژی

تعداد صفحات: ۱۱

نویسنده(ها):

Sahar Khoshabadi – Department of Physics, University of technology of shahrood, shahrood
Hamid Haratizadeh –

چکیده:

The aim of this work is calculating the emission energy for the Ga N / In Ga N x 1−x Nanostructures. The potential of these structures in wurtzites state exhibits a finite tilted rectangular quantum well potential dueto the wurtzites asymmetric crystal structures. The energy emission levelshave been numerically calculated for them Via Maple program by nearly free electron approach and by using the physical parameters such aselectron and hole effective masses, well width, barrier potential (valance and conduction band offsets), exciton binding energy & intensity of polarizationfield and the results show a good agreement with the experimental energy emission measured by photoluminescence technique