سال انتشار: ۱۳۹۰

محل انتشار: نوزدهمین کنفرانس مهندسی برق ایران

تعداد صفحات: ۶

نویسنده(ها):

S Darbari – Thin Film and Nano-Electronic Laboratory, Faculty of Electrical and Computer Engineering
M Shahmohammadi – Thin Film and Nano-Electronic Laboratory, Faculty of Electrical and Computer Engineering, University of Tehran, Tehran
S. Mohajerzadeh –

چکیده:

A low-temperature hydrogenation-assisted sequential deposition and crystallization technique is reported for the preparation of nano-scale silicon quantum dots suitable for light-emitting applications. The preparation of layers of quantum dots was by RF plasma-enhanced deposition and insitu treatment of an amorphous silicon film followed by reactive-ion etching to create the nanoscale features. The physical characteristics of the films prepared at different plasma conditions were investigated by scanning electron microscopy, transmission electron microscopy, atomic force microscopy and photoluminescence analysis. The formation of multilayered structures improved the photon-emission properties as observed by photoluminescence while a thin layer of silicon-oxy-nitride was used for electrical isolation between adjacent silicon layers. The preparation of light-emitting diodes directly on glass substrates has been also demonstrated