سال انتشار: ۱۳۹۰

محل انتشار: نوزدهمین کنفرانس مهندسی برق ایران

تعداد صفحات: ۴

نویسنده(ها):

Ali Mir – Lorestan University,
Vahid Ahmadi – Tarbiat Modares University

چکیده:

In this paper, based on the dynamic behavior of the self-assembled InAs/GaAs quantum dot (QD) infrared photodetectors (QDIPs), we present a set of rate equations. These rate equations are used to circuit modeling for the dynamic simulation of QDIP. By using the presented circuit model, effects of carrier dynamics on QDIP investigated. Theeffect of relaxation times on the frequency response and transient analysis of the self assembled QDIP, like excited state and wetting layer to ground state are studied. About 100 GHz is the predicted 3-dB cut off frequency for the evaluated InAs/GaAs QDIP.