سال انتشار: ۱۳۹۰

محل انتشار: نوزدهمین کنفرانس مهندسی برق ایران

تعداد صفحات: ۵

نویسنده(ها):

Vala Fathipour – Department of Electrical and Computer Engineering, University of Tehran, Tehran, Iran
Mohamad Ali Malakoutian –
Mortez Fathipour –

چکیده:

In this paper we propose a novel power MOSFET employing a source and drain hetrojunction as well as a thin strained silicon layer at the top of the channel and N-Drift regions. We discuss the physics involved in the operation of this device. Analysis using a 2D device simulator indicates improvements of 36.6%, 22.6% and 10% in current drivability, transconductance and cut off frequency respectively as compared with the traditional LDMOS structure. However, these improvements are accompanied by a suppression of 10% in the break down voltage