سال انتشار: ۱۳۹۰

محل انتشار: نوزدهمین کنفرانس مهندسی برق ایران

تعداد صفحات: ۴

نویسنده(ها):

Ehsan Kargaran – Sadjad Institute for Higher Education,Mashhad,Iran
Ghazal Nabovati – Ferdowsi University of Mashhad,Iran
Khalil Mafinezhad – Sadjad Institute for Higher Education,Mashhad,Iran
Hooman Nabovati – Sadjad Institute for Higher Education,Mashhad,Iran

چکیده:

A fully integrated low noise amplifier suitable for ultra-low voltage and ultra-low-power GPS applications is designed and simulated in a standard 0.18μm CMOS technology. By employing the folded cascode and forward body bias technique, the proposed LNA can operate at a reduced supply voltage and power consumption. The proposed LNA delivers a power gain (S21) of 17.6 dB with a noise figure of 3 dB, while consuming only 960μW dc power with an ultra low supply voltage of 0.45 V. The power consumption figure of merit(FOM1) and the tuning-range figure of merit(FOM2) are optimal at 18.33 dB/mw and 8.8(v.mw)-1 , respectively.