سال انتشار: ۱۳۸۷

محل انتشار: دومین کنگره بین المللی علوم و فناوری نانو

تعداد صفحات: ۲

نویسنده(ها):

M Moradinasab – Device Process Modeling and Simulation Lab. School of Electrical & Computer Eng., University of Tehran
F Karbassian – School of Electrical Eng., Tehran Polytechnic, Hafez Ave., Tehran, Iran
M Fathipour –

چکیده:

International Technology Roadmap for Semiconductors (ITRS) predicts significant future hurdles such as leakage and power for traditional CMOS technology. These problems make it difficult to realize system architectures using MOS transistors with the performance levels required by future applications. These limitations have urged the semiconductor industry to explore the use of novel materials and devices capable of replacing CMOS transistors in integrated circuits within the next decade. Among various material systems and structures being investigated as possible candidates to CMOS in a sub-10-nm transistor regime, carbon nanotube field-effect transistors (CNTFETs) have shown particular promise [1]. Two different structures have been proposed for CNTFETs. One employs Schottky barrier junction as source/drain contacts, and the other known as MOSFET-like CNTFET utilizes the CNT itself as the source and drain regions by altering its doping level. The MOSFET-like CNTFETs have higher ON-current [2]. In this paper we will focus on this kind of CNTFET and explore the impact of structural parameters including length and diameter of CNTs, and process parameters i.e. doping concentration and permittivity of the insulator on the performance of these types of transistors