سال انتشار: ۱۳۸۲

محل انتشار: یازدهمین کنفرانس مهندسی برق

تعداد صفحات: ۶

نویسنده(ها):

Farhad Taghibakhsh, – EE Dept, Azad University of Kerman
Farshid Raissi – EE Dept, K.N.Toosi University of Technology

چکیده:

The previously proposed Field Effect Diode (FED) has been more accurately studied and its forward I-V curve has been extracted numerically by solving the Poisson and continuity equations. In addition to the ability of modulating diode current by a capacitive coupled gate voltage, the simulation shows that the device has both positive and negative transfer conductance. This unique feature could have numerous circuit applications in various areas.