سال انتشار: ۱۳۹۰

محل انتشار: نوزدهمین کنفرانس مهندسی برق ایران

تعداد صفحات: ۶

نویسنده(ها):

Rana Mirzalou – Islamic Azad University (IAU), Science and Research Branch, Tehran
Abdolreza Nabavi – Tarbiat Modares University, Microelectronics Laboratory, Tehran
Ghafar Darvish – Islamic Azad University (IAU), Science and Research Branch, Tehran

چکیده:

An ultra-wideband (UWB) low-noise amplifier (LNA) with simultaneous noise and distortion cancellation is presented. This LNA utilizes a pMOS in weak inversion for second- and third-order distortion cancellation. By using two inductors, the effective bandwidth for noise/distortion cancellation and input matching are extended. This LNA has been designed in a 0.18-μm CMOS process. The noise figure is 3.8–۴٫۴۵ dB, IIP3 is 15–۲۰ dBm, IIP2 is 10–۱۶ dBm, and S11 is lower than -15 dB over 5.8–۱۰٫۶ GHz. The voltage gain is 13.8 dB while drawing 8.3 mA from 1.8 V supply voltage