سال انتشار: ۱۳۹۰

محل انتشار: نوزدهمین کنفرانس مهندسی برق ایران

تعداد صفحات: ۶

نویسنده(ها):

Golnaz Fattah – Faculty of Electrical and Computer Eng., Kerman Graduate University of Technology
Nasser Masoumi – School of Electrical and Computer Eng., College of Eng., University of Tehran
Ahmad Hakimi – Department Of Electrical Eng., Shahid Bahonar University of Kerman

چکیده:

Interconnects’ crosstalk plays a key role in ultra dense nano scale VLSI circuits because of its multi dimensional impact on overall reliability and performance of ICs. Many researches have been conducted to evaluate the crosstalk and derive expressions for the analysis. This paper presents evaluation of the crosstalk in a different structure utilizing both rigorous simulations and analytical formulations. In the partially coupled interconnects structure, considered in this work, the crosstalk effects are investigated while the position and coupled length of the interconnect wires (aggressor and victim) are varied. We show that in all the cases where the victim line stay behind the aggressor line, the crosstalk is larger than the opposite cases for which the victim line is placed ahead of the aggressor line. Consequently, for a structure of relevant parameters, the crosstalk can be reduced up to 92% compared to the interconnect system of the opposite structure