سال انتشار: ۱۳۹۱

محل انتشار: همایش سالانه روشهای اجزای محدود در فیزیک کاربردی

تعداد صفحات: ۶

نویسنده(ها):

Mohammad Sabaeian – Department of Physics, Faculty of Science, Shahid Chamran University of Ahvaz, Ahvaz, Iran
Ali Khaledi-Nasab – Department of Physics, Faculty of Science, Shahid Chamran University of Ahvaz, Ahvaz, Iran

چکیده:

In this work the effect of spacer variations between two 10nm coupled InAs/GaAs quantum dots (QDs) on the energy eigenvalues and envelop functions were investigated in detail. With considering wetting layer and a finite potential barrier, the Schrödinger equation was solved numerically by finite element method (FEM). The results show every energy level split into two levels when QDs are closed together. However with increasing the spacer, split levels are unified at approximately 30nm.